Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors
Authors:
- K E MoselundKMK E Moselund
- M T BjörkMBM T Björk
- 4 October 2010
- journal article
- research article
- Published by IOP Publishing in Nanotechnology
- Vol. 21 (43) , 435202
Abstract
In this work we investigate doping by solid-state diffusion from a doped oxide layer, obtained by plasma-enhanced chemical vapor deposition (PECVD), as a means for selectively doping silicon nanowires (NWs). We demonstrate both n-type (phosphorous) and p-type (boron) doping up to concentrations of 10(20) cm(-3), and find that this doping mechanism is more efficient for NWs as opposed to planar substrates. We observe no diameter dependence in the range of 25 to 80 nm, which signifies that the NWs are uniformly doped. The drive-in temperature (800-950 degrees C) can be used to adjust the actual doping concentration in the range 2 x 10(18) to 10(20) cm(-3). Furthermore, we have fabricated NMOS and PMOS devices to show the versatility of this approach and the possibility of achieving segmented doping of NWs. The devices show high I-on/I-off ratios of around 10(7) and, especially for the PMOS, good saturation behavior and low hysteresis.Keywords
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