Ferromagnetic III–V heterostructures
Author:
- 1 July 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
- Vol. 18 (4) , 2039-2043
Abstract
Properties of the ferromagnetic III–V semiconductor (Ga,Mn)As and heterostructures based on it are reviewed. A model based on hole-mediated ferromagnetic interaction is shown to successfully describe the ferromagnetic transition temperature of (Ga,Mn)As. Spontaneous splitting of resonant tunneling spectra was compared with theory and shown to result from the spin splitting of the valence band. The first demonstration of spin-dependent scattering in magnetic semiconductor trilayers as well as electrical spin injection is also reviewed.Keywords
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