Wide optical-gap a-SiO:H films prepared by rf glow discharge
Authors:
- Debajyoti DasDDDebajyoti Das
- S.M IftiquarSIS.M Iftiquar
- A.K BaruaABA.K Barua
- 1 March 1997
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 210 (2-3) , 148-154
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- High Quality a-SiO:H Films and Their Application to a-Si Solar CellsMRS Proceedings, 1992
- Properties of Silicon-Oxygen Alloy Films Prepared from SiH4+CO2 Gas MixtureJapanese Journal of Applied Physics, 1991
- Optical Constants of a-SixC1-x:H Alloy Films Deposited by Tetrode RF SputteringJapanese Journal of Applied Physics, 1990
- a-Si1-xOx:H Films Prepared by Direct Photo-CVD Using CO2 GasJapanese Journal of Applied Physics, 1988
- Optical properties and structure of thin SiOx filmsThin Solid Films, 1987
- Structure and Defects in Amorphous Si–O FilmsJapanese Journal of Applied Physics, 1987
- Infrared, Raman, and X‐Ray Diffraction Studies of Silicon Oxide Films Formed from SiH4 and N 2 O Chemical Vapor DepositionJournal of the Electrochemical Society, 1985
- Light-induced metastable effects in hydrogenated amorphous siliconSolar Energy Materials, 1982
- Properties and structure of a-SiC:H for high-efficiency a-Si solar cellJournal of Applied Physics, 1982
- Optical absorption, photoconductivity, and photoluminescence of glow-discharge amorphousalloysPhysical Review B, 1982