Electrical characteristics of solution‐processed InGaZnO thin film transistors depending on Ga concentration
Authors:
- 12 July 2010
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 207 (7) , 1677-1679
Abstract
We investigated the role of Ga in solution‐processed InGaZnO thin film transistors (TFTs). The incorporation of Ga into a InZnO compound system results in a decrease in the carrier concentration of the films and an off‐current of TFTs. This is a result of the Ga ions forming stronger chemical bonds with oxygen, as compared to the Zn and In ions, acting as a carrier suppressor. It was verified, using X‐ray photoelectron spectroscopy (XPS), that the vacancy‐related oxygen 1s peak was decreased when the Ga content increased.Keywords
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