Two‐dimensional electrons occupying multiple valleys in AlAs
Authors:
- 7 November 2006
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 243 (14) , 3629-3642
Abstract
Two‐dimensional electrons in AlAs quantum wells occupy multiple conduction‐band minima at the X‐points of the Brillouin zone. These valleys have large effective mass and g ‐factor compared to the standard GaAs electrons, and are also highly anisotropic. With proper choice of well width and by applying symmetry‐breaking strain in the plane, one can control the occupation of different valleys thus rendering a system with tuneable effective mass, g ‐factor, Fermi contour anisotropy, and valley degeneracy. Here we review some of the rich physics that this system has allowed us to explore.Keywords
All Related Versions
This publication has 56 references indexed in Scilit:
- Spin Susceptibility of Two-Dimensional Electrons in Narrow AlAs Quantum WellsPhysical Review Letters, 2004
- Quantum Hall ferromagnetism of AlAs 2D electronsPhysica E: Low-dimensional Systems and Nanostructures, 2004
- Enhanced electron mobility and high order fractional quantum Hall states in AlAs quantum wellsApplied Physics Letters, 2002
- Xz−Xxy crossover in a two-dimensional electron gas in AlAsSurface Science, 1996
- X conduction two-dimensional subband structure and order in AlGaAs/AlAs quantum wellsPhysica B: Condensed Matter, 1994
- High-quality two-dimensional electron system confined in an AlAs quantum wellApplied Physics Letters, 1993
- Effective mass and ground state of AlAs quantum wells studied by magnetoresistance measurementsJournal of Applied Physics, 1992
- Electron mobilities exceeding 107 cm2/V s in modulation-doped GaAsApplied Physics Letters, 1989
- Order of theXconduction-band valleys in type-II GaAs/AlAs quantum wellsPhysical Review B, 1989
- Two-dimensional magnetotransport in AlAs quantum wellsPhysical Review B, 1987