Role of IGZO thickness for oxygen reservoir control in stacked IGZO/ZrOx layers: Towards reliable, uniform performance of flexible random-access memories
Authors:
- Ajit KumarAKAjit Kumar
- Mokurala KrishnaiahMKMokurala Krishnaiah
- Dhananjay MishraDMDhananjay Mishra
- Hyeonbin JoHJHyeonbin Jo
- Sung Hun JinSJSung Hun Jin
- 5 July 2022
- journal article
- research article
- Published by Elsevier in Journal of Alloys and Compounds
- Vol. 922
Abstract
No abstract availableKeywords
Funding Information
- Incheon National University
This publication has 51 references indexed in Scilit:
- Reset Instability in $\hbox{Cu}/\hbox{ZrO}_{2}$:Cu/Pt RRAM DeviceIEEE Electron Device Letters, 2011
- Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc OxideElectrochemical and Solid-State Letters, 2011
- Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layerNanotechnology, 2010
- High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devicesJournal of Physics D: Applied Physics, 2010
- Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti IonsIEEE Electron Device Letters, 2009
- Theoretical and Experimental Studies of Bending of Inorganic Electronic Materials on Plastic SubstratesAdvanced Functional Materials, 2008
- Resistive switching in transition metal oxidesMaterials Today, 2008
- Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$IEEE Electron Device Letters, 2008
- Electrical Properties and Fatigue Behaviors of ZrO[sub 2] Resistive Switching Thin FilmsJournal of the Electrochemical Society, 2008
- Memory effect of RF sputtered ZrO2 thin filmsThin Solid Films, 2007