Phase constitution and element distribution in Cu-In-S based absorber layers grown by the CISCuT-process
Authors:
- M WinklerMWM Winkler
- O ToberOTO Tober
- J PenndorfJPJ Penndorf
- K SzulzewskyKSK Szulzewsky
- D RöserDRD Röser
- G LippoldGLG Lippold
- K OtteKOK Otte
- 1 February 2000
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 361-362, 273-277
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Smoothing of polycrystalline Cu(In,Ga)(Se,S)2 thin films by low-energy ion-beam etchingJournal of Vacuum Science & Technology A, 1999
- Low energy ion beam etching of CuInSe2 surfacesJournal of Vacuum Science & Technology A, 1999
- CuInS2 thin film formation on a Cu tape substrate for photovoltaic applicationsSolar Energy Materials and Solar Cells, 1998
- Crystalline phases at the p- to n-type transition in Cu-ternary semiconducting filmsApplied Physics Letters, 1996
- POWDER CELL – a program for the representation and manipulation of crystal structures and calculation of the resulting X-ray powder patternsJournal of Applied Crystallography, 1996
- Quantitative Phase Analysis using the Whole-Powder-Pattern Decomposition Method. I. Solution from Knowledge of Chemical CompositionsJournal of Applied Crystallography, 1995
- Raman and Infrared Studies of AgIn5S8 and CuIn5S8 Single CrystalsPhysica Status Solidi (b), 1993
- Phase equilibria of the cu-in system I: Experimental investigationJournal of Phase Equilibria and Diffusion, 1993
- Infrared Studies of the Layered Compound ZnIn2S4Physica Status Solidi (b), 1977
- Zone‐centered phonons in AIBIIIS2 chalcopyritesPhysica Status Solidi (b), 1975