Nonlinear Mechanism of Passive Intermodulation Power Jumps Induced by Mechanical Shocks

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Abstract
To elucidate the mechanism behind the passive intermodulation (PIM) power jump phenomenon observed during dual-tone intermodulation (IM) testing, the work investigated the nonlinear transient behavior of contact interfaces induced by relative micro-movements. The concept of PIM power jump was formally introduced, accompanied by a time-domain transient analysis. A second-order parallel RLC circuit was used to fit the waveform of PIM power jumps. A time-domain model for PIM power jumps was theoretically developed by coupling mechanical dynamics, microscopic surface mechanics, and electrical contact theories. To support this model, an equivalent spring-mass system model of the contact interface, a statistical finite element model of micro-asperities, and an equivalent contact impedance model were established to predict the PIM power jumps. In addition, a series of PIM power jump observation experiments under different mechanical shocks was conducted with connectors of varying tightness. The predicted responses show strong agreement with experimental measurements, validating the accuracy and applicability of the proposed model. This analytical approach provides a solid theoretical foundation for mitigating detrimental PIM power jump effects in radio frequency (RF) systems.
Funding Information
  • National Key Research and Development Program of China (2022YFF0605904)
  • Specialized Scientific Research Projects of Chinese Institute of Electronics and Beijing Smart-Chip Microelectronics Technology Company Ltd.

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