Growth of Amorphous, Microcrystalline, and Epitaxial Silicon in Low Temperature Plasma Deposition
Authors:
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
- Vol. 192
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Present and future applications of amorphous silicon and its alloysJournal of Non-Crystalline Solids, 1989
- Control of silicon network structure in plasma depositionJournal of Non-Crystalline Solids, 1989
- I n s i t u ellipsometry of thin-film deposition: Implications for amorphous and microcrystalline Si growthJournal of Vacuum Science & Technology B, 1989
- PLASMA DEPOSITION OF AMORPHOUS AND CRYSTALLINE SILICON: THE EFFECT OF HYDROGEN ON THE GROWTH, STRUCTURE AND ELECTRONIC PROPERTIES1989
- Low temperature plasma enhanced CVD of highly conductive single crystalline and polycrystalline silicon materialsApplied Surface Science, 1989
- Epitaxial Growth of Silicon by Plasma Chemical Vapor Deposition at a Very Low Temperature of 250°CJapanese Journal of Applied Physics, 1987
- Preparation of Polycrystalline Silicon by Hydrogen-Radical-Enhanced Chemical Vapor DepositionJapanese Journal of Applied Physics, 1987
- Epitaxial growth of silicon by photochemical vapor deposition at a very low temperature of 200 °CApplied Physics Letters, 1986
- Film formation mechanisms in the plasma deposition of hydrogenated amorphous siliconJournal of Applied Physics, 1986