Hole traps in silicon dioxide
Authors:
- 1 March 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (3) , 1082-1089
Abstract
We have measured the properties of holes trapped in an SiO2 layer by application of a large electric field. The high field (1.4×107 V/cm) was obtained by applying a negative corona charge to the outer SiO2 surface of a Si‐SiO2 structure. The maximum number of trapped holes was 4×1012 cm−2 and the centroid of their distribution was 130 Å from the Si interface. All holes were trapped within 320 Å of the Si interface. Photodischarge experiments show the level of the trapped holes to be at least 4–5 eV above the valence band edge. We were unable to trap holes in the SiO2 by internal photoemission of holes from the Si. A consistent picture is developed with results that are comparable to those found for trapping holes by irradiation of the SiO2 by a vacuum ultraviolet source.Keywords
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