Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by Using 2-D Close-Packed ${\hbox{TiO}}_{2}$ Microsphere Arrays
- 7 March 2013
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Display Technology
- Vol. 9 (5) , 324-332
Abstract
The enhancement of light extraction efficiency of InGaN quantum well light emitting diodes (LEDs) was achieved by employing the refractive index matched ${\hbox{TiO}}_{2}$ microsphere arrays. The optimization studies of the dipping method and rapid convective deposition (RCD) method were carried out for the deposition of ${\hbox{TiO}}_{2}$ microsphere arrays onto LEDs. The two-dimensional (2D) close-packed ${\hbox{TiO}}_{2}$ microsphere arrays were deposited by the using optimized conditions of the dipping and RCD methods, respectively. The light extraction efficiencies of LEDs under electrical injection were enhanced by 1.8–1.9 times by utilizing 520-nm diameter amorphous and anatase ${\hbox{TiO}}_{2}$ microspheres via the two deposition methods.
Keywords
This publication has 59 references indexed in Scilit:
- Strong light-extraction enhancement in GaInN light-emitting diodes patterned with TiO2 micro-pillars with tapered sidewallsApplied Physics Letters, 2012
- Effect of carrier spillover and Auger recombination on the efficiency droop in InGaN-based blue LEDsSuperlattices and Microstructures, 2010
- 500 nm electrically driven InGaN based laser diodesApplied Physics Letters, 2009
- High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodesApplied Physics Letters, 2009
- Tuning the Electronic and Molecular Structures of Catalytic Active Sites with Titania NanoligandsJournal of the American Chemical Society, 2008
- Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arraysApplied Physics Letters, 2007
- Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodesApplied Physics Letters, 2007
- Fabrication of reflective GaN mesa sidewalls for the application to high extraction efficiency LEDsphysica status solidi (c), 2007
- Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflectionNature Photonics, 2007
- Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodesApplied Physics Letters, 2003