Structural order and dynamics of amorphous Si and Ge
Author:
- Jeffrey S. LanninJLJeffrey S. Lannin
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 39-46
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Raman coupling-parameter variation in amorphous germaniumPhysical Review B, 1987
- Dynamical Structure Factor of Amorphous GermaniumPhysical Review Letters, 1986
- Vibrational properties of amorphous silicon in the frequency range 250–450Physical Review B, 1985
- Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantationJournal of Applied Physics, 1985
- Determination of energy barrier for structural relaxation in a-Si and a-Ge by Raman scatteringJournal of Non-Crystalline Solids, 1984
- Measurement of Phonon Densities of States for Pure and Hydrogenated Amorphous SiliconPhysical Review Letters, 1984
- A neutron diffraction study of the structure of evaporated amorphous germaniumJournal of Non-Crystalline Solids, 1982
- Structural relaxation and crystallization of amorphous Ge filmsJournal of Non-Crystalline Solids, 1980
- A theory of the structure of tetrahedrally bonded amorphous solidsJournal of Non-Crystalline Solids, 1978
- Low frequency coupling constants for Raman scattering in amorphous solidsSolid State Communications, 1973