Anion Effects on Cu–benzotriazole Film Formation
- 1 January 2007
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 154 (1) , D57-D63
Abstract
We examine the effect of different anions in solutions containing benzotriazole (BTA) on the Cu removal rate during chemical mechanical planarization (CMP). In solutions containing both Cl−Cl− and BTA, the Cu removal rate is nearly a factor of twenty lower than in solutions containing either Cl−Cl− or BTA alone. As-grown BTA films from solutions containing different anions are characterized using atomic force microscopy, ellipsometry, Raman spectroscopy, mass spectrometry, and open-circuit-potential measurements. Films grown from halide-containing solutions are found to be considerably thicker than those grown from other anions. The difference in Cu removal rate correlates well with the different as-grown film thicknesses.Keywords
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