New Generation Beta‐Gallium Oxide Nanomaterials: Growth and Performances in Electronic Devices

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Abstract
In the last decade, beta‐gallium oxide (β‐Ga2O3) has been the subject of extensive research and has rapidly developed as a material for ultra‐wide bandgap semiconductors. One‐dimensional (1D) β‐Ga2O3 nanostructures have advantages over bulk β‐Ga2O3, including a high‐specific surface area, sensitivity, and the quantum confinement effect. These advantages are favorable to developing various applications such as power electronics with improved heat dissipation effect, high detectivity photodetectors, and high sensitivity gas sensors. These nanostructures can be fabricated through top‐down or bottom‐up methods and have been utilized in various shapes, such as nanowires, nanobelts, nanorods, nanotubes, or networks, in various electronic devices. This review summarizes the recent developments in 1D β‐Ga2O3 nanostructures, focusing on growth methodologies and mechanisms. In detail, the growth methodologies of 1D β‐Ga2O3 are summarized based on four categories: vapor–liquid–solid, vapor–solid, solution–solid, and template mechanisms. Ten growth techniques regarding different fabrication mechanisms are reviewed and the corresponding applications such as gas sensors, UV photodetectors, resistive random access memories, and photocatalysts are summarized. This review provides material design strategies for developing next‐generation optoelectronic or electronic products by summarizing the properties and fabrication methods of 1D β‐Ga2O3.
Funding Information
  • Natural Science Foundation of Guangdong Province (2019A1515011812)
  • National Natural Science Foundation of China (51775282)

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