Shallow donors in GaN
Authors:
- 6 November 2003
- journal article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 240 (2) , 330-336
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Donor-related recombination processes in hydride-vapor-phase epitaxial GaNPhysical Review B, 2002
- Recombination of excitons bound to oxygen and silicon donors in freestanding GaNPhysical Review B, 2002
- Donors in hydride-vapor-phase epitaxial GaNJournal of Crystal Growth, 2002
- Magneto-optical studies of free-standing hydride-vapor-phase epitaxial GaNPhysical Review B, 2002
- Structural and optical properties of thick freestanding GaN templatesJournal of Crystal Growth, 2001
- Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductorsPhysica B: Condensed Matter, 2001
- Theory of doping and defects in III–V nitridesJournal of Crystal Growth, 1998
- Photoluminescence, Reflectance, and Magnetospectroscopy of Shallow Excitons in GaNMRS Proceedings, 1996
- Free and Bound Excitons in GaN Epitaxial FilmsMRS Proceedings, 1996
- Thermal Annealing Effects on P-Type Mg-Doped GaN FilmsJapanese Journal of Applied Physics, 1992