Effects of PbO Content on the Dielectric Properties and Energy Storage Performance of (Pb 0.97 La 0.02 )(Zr 0.97 Ti 0.03 )O 3 Antiferroelectric Thin Films

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Abstract
A 400‐nm‐thick (Pb 0.97 La 0.02 )(Zr 0.97 Ti 0.03 )O 3 (PLZT 2/97/3) antiferroelectric (AFE) thin films with different lead excess content (0%, 10%, and 20%) were successfully deposited on Pt(111)/TiO 2 /SiO 2 /Si substrates via a sol–gel process. The effects of lead excess content on the microstructure, dielectric properties, and energy storage performance of PLZT 2/97/3 AFE thin films were investigated in details. X‐ray diffraction results displayed that AFE thin films were changed from the (111)‐preferred orientation to the (100) and (111)‐mixed orientation with increasing lead excess content. Dielectric measurements showed that AFE thin films with higher lead excess content exhibited enhanced dielectric constant and larger phase transformation fields. Thus, the energy storage density of AFE thin films was also remarkably improved from 3.3 to 11.7 J/cm 3 at 1200 kV/cm.

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