Efficient creation of shallow NV − ensembles by high-angle ion implantation

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Abstract
Nitrogen-vacancy centers in diamond are widely used as quantum sensors, but creating shallow ensembles with high yield and reasonable spin coherence remains challenging. We show that high-angle nitrogen ion implantation efficiently forms shallow NV ensembles. Implanting ions at angles above 60\ifmmode^\circ\else\textdegree\fi{} gives NV yields approaching 10% with effective depths below 10 nm. The oblique geometry enhances near-surface vacancy generation while keeping nitrogen close to the surface, improving the conditions for NV formation. The resulting ensembles retain stable charge states and useful spin coherence, offering a practical platform for nanoscale NMR and NQR sensing.
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Funding Information
  • Japan Science and Technology Corporation (JPMJCR23I2)
  • Japan Science and Technology Corporation (JPMJMS2062)
  • Japan Society for the Promotion of Science (JP24K21194)
  • Japan Society for the Promotion of Science (JP25H01248)
  • Japan Society for the Promotion of Science (JP26H02007)
  • Japan Society for the Promotion of Science (JP25K00934)
  • Japan Society for the Promotion of Science (JP25K00931)
  • Japan Society for the Promotion of Science (JP25K01292)
  • University of Tokyo
  • Mitsubishi Foundation (202310021)
  • Tohoku University (JPMXP1225UT1155)
  • Ministry of Education, Culture, Sports, Science and Technology (JPMXS0118068379)

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