Microscopic stress analysis of nanoscratch induced sub-surface defects in a single-crystal silicon wafer
- 15 April 2023
- journal article
- research article
- Published by Elsevier in Precision Engineering
- Vol. 82, 290-303
Abstract
No abstract availableKeywords
This publication has 34 references indexed in Scilit:
- Prediction of the threshold load of dislocation emission in silicon during nanoscratchingActa Materialia, 2013
- A study on the diamond grinding of ultra-thin silicon wafersProceedings of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture, 2011
- Nanoscratch-induced phase transformation of monocrystalline SiScripta Materialia, 2010
- A New Analytical Model for Estimation of Scratch‐Induced Damage in Brittle SolidsJournal of the American Ceramic Society, 2007
- Deformation mechanisms of silicon during nanoscratchingPhysica Status Solidi (a), 2005
- On the effect of crystallographic orientation on ductile material removal in siliconPrecision Engineering, 2005
- Fracture anisotropy in silicon single crystalMaterials Science and Engineering: A, 1999
- Atomic scale deformation in silicon monocrystals induced by two-body and three-body contact slidingTribology International, 1998
- Fifty-year study of the Peierls-Nabarro stressMaterials Science and Engineering: A, 1997
- Crystal data for high-pressure phases of siliconPhysical Review B, 1986