AlN MSM and Schottky photodetectors
- 13 May 2008
- journal article
- review article
- Published by Wiley in physica status solidi (c)
- Vol. 5 (6) , 2148-2151
Abstract
Deep ultraviolet (DUV) AlN Metal‐Semiconductor‐Metal (MSM) and Schottky barrier photodetectors have been demonstrated by exploiting the epitaxial growth of high quality AlN epilayer on sapphire and n‐SiC substrates, respectively. The fabricated photodetectors exhibited peak responsivity at 200 nm with very sharp cut‐off wavelength at 207 nm along with extremely low dark current, very high breakdown voltages, high responsivity and high DUV to UV/visible rejection ratio. AlN Schottky barrier detectors show high zero bias responsivity and very high thermal energy limited detectivity at zero bias. These outstanding features are direct attributes of the fundamental material properties and high quality of AlN epilayers. These results demonstrated that AlN could be an excellent candidate as an active material for next generation DUV opto‐electronic device applications.Keywords
This publication has 9 references indexed in Scilit:
- Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectorsApplied Physics Letters, 2007
- 200 nm deep ultraviolet photodetectors based on AlNApplied Physics Letters, 2006
- An aluminium nitride light-emitting diode with a wavelength of 210 nanometresNature, 2006
- Deep-ultraviolet Al0.75Ga0.25N photodiodes with low cutoff wavelengthApplied Physics Letters, 2006
- Demonstration of 4H-SiC visible-blind EUV and UV detector with large detection areaElectronics Letters, 2005
- Solar-Blind AlGaN-Based p-i-n Photodiodes With Low Dark Current and High DetectivityIEEE Photonics Technology Letters, 2004
- High performance Schottky UV detectors (265–100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layerPhysica Status Solidi (a), 2003
- Band-edge photoluminescence of AlN epilayersApplied Physics Letters, 2002
- Improved solar-blind detectivity using an AlxGa1−xN heterojunction p–i–n photodiodeApplied Physics Letters, 2002