Ab-initio computations of electronic and transport properties of wurtzite aluminum nitride (w-AlN)
Authors:
- Ifeanyi H. NwigbojiINIfeanyi H. Nwigboji
- John I. EjembiJEJohn I. Ejembi
- Yuriy MalozovskyYMYuriy Malozovsky
- Bethuel KhamalaBKBethuel Khamala
- Lashounda FranklinLFLashounda Franklin
- Guanglin ZhaoGZGuanglin Zhao
- Chinedu E. EkumaCEChinedu E. Ekuma
- Diola BagayokoDBDiola Bagayoko
- 1 May 2015
- journal article
- research article
- Published by Elsevier in Materials Chemistry and Physics
- Vol. 157, 80-86
Abstract
No abstract availableKeywords
All Related Versions
Funding Information
- National Science Foundation
- Louisiana Board of Regents, through LASiGMA
- NSF (EPS- 1003897)
- NSF (HRD-1002541)
- US Department of Energy – National, Nuclear Security Administration (DE-NA0001861, DE-NA0002630)
- LaSPACE
- LONI-SUBR
This publication has 67 references indexed in Scilit:
- Structural and Optical Properties of Aluminum Nitride Thin Films Deposited by Pulsed DC Magnetron SputteringISRN Materials Science, 2013
- Role of the plasmon-pole model in theapproximationPhysical Review B, 2013
- Density functional theory description of electronic properties of wurtzite zinc oxideJournal of Physics and Chemistry of Solids, 2013
- Reconstructions of the AlN(0001) surfacePhysical Review B, 2003
- First-principles investigation of lattice constants and bowing parameters in wurtzite AlxGa1 xN, InxGa1 xN and InxAl1 xN alloysSemiconductor Science and Technology, 2003
- Effective electronic masses in wurtzite and zinc-blende GaN and AlNJournal of Crystal Growth, 2001
- Strain effects on the interface properties of nitride semiconductorsPhysical Review B, 1997
- Electronic structure and properties of AlNPhysical Review B, 1994
- Semiempirical tight-binding band structures of wurtzite semiconductors: AlN, CdS, CdSe, ZnS, and ZnOPhysical Review B, 1983
- Total-energy calculations for Si with a first-principles linear-combination-of-atomic-orbitals methodPhysical Review B, 1982