The inelastic mean free path of electrons in some semiconductor compounds and metals

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Abstract
The elastic backscattering probability P e of electrons is proportional to the product of the inelastic mean free path (IMFP), effective backscattering cross section (σ eff ), and atomic density ( N ). Thus, experimental evaluation of P e , e.g. from the elastic peak intensity measurements, enables the determination of the IMFP. σ eff can be calculated by integrating the differential elastic scattering cross sections using a simplified model based on the first Born approximation and the Thomas–Fermi–Dirac atomic potential. No significant difference in the values of σ eff was found using the Thomas–Fermi, the Thomas–Fermi–Dirac and the Hartree–Fock atomic potentials or integrating the scattering cross sections tabulated by Fink et al. From the experimental values of P e reported by Schmid et al. and by Gergely the IMFP was determined for a number of elements. A good agreement was found with the data on the IMFP published in the literature. Comparing the elastic peak of two samples and using the data of Ashley and Tung as reference values, the IMFP has been determined for GaP, GaSb, InP, InSb and Si 3 N 4 samples. Good agreement with the data of Ashley and Tung was obtained for Si, Ge, SiO 2 and GaAs.

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