GaN-based waveguide devices for long-wavelength optical communications

Refractive indices of ${\mathrm{Al}}_x{\mathrm{Ga}}_{\text{1−x}}\mathrm{N}$ with different Al concentrations have been measured in infrared wavelength regions. Single-mode ridged optical waveguide devices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550 nm wavelength window. The feasibility of developing photonic integrated circuits based on III-nitride wide-band-gap semiconductors for fiber-optical communications has been discussed.