Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application
Authors:
- I.G. BaekIBI.G. Baek
- D.C. KimDKD.C. Kim
- M.J. LeeMLM.J. Lee
- H.-J. KimHKH.-J. Kim
- E.K. YimEYE.K. Yim
- M.S. LeeMLM.S. Lee
- J.E. LeeJLJ.E. Lee
- S.E. AhnSAS.E. Ahn
- S. SeoSSS. Seo
- J.H. LeeJLJ.H. Lee
- J.C. ParkJPJ.C. Park
- Y.K. ChaYCY.K. Cha
- 7 April 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 750-753
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
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- Vertical p–i–n Polysilicon Diode With Antifuse for Stackable Field-Programmable ROMIEEE Electron Device Letters, 2004
- High-current-density ITOx/NiOx thin-film diodesApplied Physics Letters, 1998