Electron transport in InP at high electric fields
Authors:
- 15 April 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (8) , 725-727
Abstract
The high field (>30 kV/cm) electron drift velocity in n‐type (100) InP has been measured at temperatures from 95 to 400 K and electric field strengths up to 215 kV/cm using a fixed frequency (7.54 GHz) microwave time‐of‐flight technique. The velocity decreases monotonically with increasing electric field strength at all temperatures over the entire range of field strengths investigated. At 300 K the electron drift velocity in InP is 1.2 times the velocity in GaAs at 150 kV/cm, and increases to 1.34 times the velocity in GaAs when the field is lowered to 30 kV/cm.Keywords
This publication has 19 references indexed in Scilit:
- Capacitive probe measurements of dipole domains in InPIEEE Transactions on Electron Devices, 1975
- Velocity/field characteristic of n -type indium phosphide at 110 and 330 KElectronics Letters, 1975
- Measurement of the velocity-field characteristic of indium phosphide by the microwave absorption techniqueIEEE Transactions on Electron Devices, 1974
- Determination of the velocity/field characteristic for n type indium phosphide from dipole-domain measurementsElectronics Letters, 1972
- Microwave Measurement of the Velocity-Field Characteristic of n-Type InPApplied Physics Letters, 1972
- Microwave measurement of electron drift velocity in indium phosphide for electric fields up to 50 kV/cmPhysics Letters A, 1972
- Measurement of velocity-field characteristic for electrons in indium phosphideSolid State Communications, 1972
- Comparison of the microwave velocity/field characteristics of n type InP and n type GaAsElectronics Letters, 1971
- Fast algorithms for continuous estimation of mean value of a random variableElectronics Letters, 1971
- A NEW MEASUREMENT OF THE VELOCITY-FIELD CHARACTERISTIC OF GaAsApplied Physics Letters, 1969