NEGATIVE RESISTANCE, CONDUCTIVE SWITCHING, AND MEMORY EFFECT IN SILICON-DOPED YTTRIUM-IRON GARNET CRYSTALS
Authors:
- 1 September 1970
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (5) , 199-201
Abstract
A current-controlled negative resistance has been found in thin single-crystal wafers of silicon-doped yttrium-iron garnet (Si-YIG). Switching properties have been examined, and relaxation oscillations in the range 0.5–1 MHz have been established in the negative resistance region. A conductive memory state having a behavior similar to that occurring in amorphous semiconductors has also been seen.Keywords
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