Depth profile and interface analysis in the nm-range
Authors:
- S. OswaldSOS. Oswald
- R. ReicheRRR. Reiche
- M. ZierMZM. Zier
- S. BaunackSBS. Baunack
- K. WetzigKWK. Wetzig
- 1 September 2005
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 252 (1) , 3-10
Abstract
No abstract availableThis publication has 37 references indexed in Scilit:
- The role of new materials in the development of magnetic sensors and actuatorsSensors and Actuators A: Physical, 2003
- Future Direction for a Diffusion Barrier in Future High-Density Volatile and Nonvolatile Memory DevicesCritical Reviews in Solid State and Materials Sciences, 2002
- Technology and materials issues in semiconductor-based magnetoelectronicsSemiconductor Science and Technology, 2002
- Elementary magnetoelectronicsIEEE Potentials, 2002
- Barrier layers for Cu ULSI metallizationJournal of Electronic Materials, 2001
- Ultrathin Diffusion Barriers/Liners for Gigascale Copper MetallizationAnnual Review of Materials Science, 2000
- XPS investigation with factor analysis for the study of Ge clustering in SiO2Surface and Interface Analysis, 2000
- Bombardment-induced silicide formation at rhenium-silicon interfaces studied by XPS and TEMAnalytical and Bioanalytical Chemistry, 1999
- Depth distribution and bonding states of phosphorus implanted in titanium investigated by AES, XPS and SIMSSurface and Interface Analysis, 1998
- Application of XPS and factor analysis for non-conducting materialsSurface and Interface Analysis, 1997