Electron beam fabrication of 0.2 μm lines, suitable for GaAs MMIC processing
Author:
- B. WolfstädterBWB. Wolfstädter
- 31 May 1989
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 9 (1-4) , 221-224
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Quarter micron low noise GaAs FET'sIEEE Electron Device Letters, 1982
- Lift-off of thick metal layers using multilayer resistJournal of Vacuum Science and Technology, 1981
- Double-layer resist films for submicrometer electron-beam lithographyIEEE Transactions on Electron Devices, 1980
- PMMA copolymers as high sensitivity electron resistsJournal of Vacuum Science and Technology, 1979
- Optimal noise figure of microwave GaAs MESFET'sIEEE Transactions on Electron Devices, 1979
- Submicrometer gate fabrication of GaAs MESFET by plasma etchingIEEE Transactions on Electron Devices, 1978