Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs
Authors:
- 25 October 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (18) , 182904
Abstract
Atomic-layer deposition (ALD) provides a unique opportunity to integrate high-quality gate dielectrics on III-V compound semiconductors. We report detailed leakage current and breakdown electric-field characteristics of ultrathin Al2O3 dielectrics on GaAs grown by ALD. The leakage current in ultrathin Al2O3 on GaAs is comparable to or even lower than that of state-of-the-art SiO2 on Si, not counting the high-k dielectric properties for Al2O3. A Fowler-Nordheim tunneling analysis on the GaAs∕Al2O3 barrier height is also presented. The breakdown electric field of Al2O3 is measured as high as 10MV∕cm as a bulk property. A significant enhancement on breakdown electric field up to 30MV∕cm is observed as the film thickness approaches to 1nm.Keywords
This publication has 13 references indexed in Scilit:
- GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectricApplied Physics Letters, 2005
- Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer depositionApplied Physics Letters, 2004
- GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer depositionApplied Physics Letters, 2003
- GaAs MOSFET with oxide gate dielectric grown by atomic layer depositionIEEE Electron Device Letters, 2003
- Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substratesThin Solid Films, 2002
- High-κ gate dielectrics: Current status and materials properties considerationsJournal of Applied Physics, 2001
- Effect of SiO2 intermediate layer on Al2O3/SiO2/n+-poly Si interface deposited using atomic layer deposition (ALD) for deep submicron device applicationsSurface and Coatings Technology, 2000
- Layered tantalum-aluminum oxide films deposited by atomic layer epitaxyThin Solid Films, 1993
- Low-Temperature Growth of Thin Films of Al2O3 by Sequential Surface Chemical Reaction of trimethylaluminum and H2O2Japanese Journal of Applied Physics, 1991
- Sequential surface chemical reaction limited growth of high quality Al2O3 dielectricsApplied Physics Letters, 1989