Excitation and decay mechanisms of the intra-4f luminescence of Yb3+ in epitaxial InP:Yb layers
Authors:
- 11 January 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (2) , 114-116
Abstract
The decay and excitation processes of internal transitions of Yb3+(4f13) incorporated in InP were investigated by means of time-resolved photoluminescence and photoluminescence excitation spectroscopy. From the temperature dependence of the excited state lifetime we find several decay mechanisms, including a bound-exciton-like Auger process, energy transfer, and thermal depopulation. Excitation spectroscopy reveals that free carriers are needed during the excitation process of Yb centers.Keywords
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