Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by Using a Monoenergetic Positron Beam

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Abstract
Annealing behaviors of vacancy-type defects in Mg and N-implanted GaN were studied by positron annihilation. The major defect species in as-implanted samples was identified as Ga-vacancy (VGa)-type defects. For Mg-implanted GaN with sequential N-implantation after annealing above 10000C, the defect species were vacancy clusters such as (VGaVN)3. Due to the downward shift of the Fermi level position resulting from a partial activation of Mg, the charge states of defects tended to become positive. For N-implanted GaN, the size of the vacancy cluster started to decrease above 12000C annealing, which was attributed to recombinations between VNs coupled with VGas and excess N atoms. The impact of sequential N-implantations on vacancies in Mg-implanted GaN was found to be most pronounced when the ratio of the concentration of N to that of Mg was three.
Funding Information
  • NEDO Program for Cross-Ministerial Strategic Innovation Promotion
  • MEXT Program for Research and Development of Next-Generation Semiconductor to Realize Energy-Saving Society (JPJ005357)
  • MEXT Program for Creation of Innovative Core Technology for Power Electronics (JPJ009777)
  • JSPS KAKENHI (21H01826)
  • Polish National Centre for Research and Development (TECHMATSTRATEG-III/0003/2019-00)
  • Narodowe Centrum Nauki (2018/29/B/ST5/00338)

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