Cathodoluminescence assessment of GaAs1−x Px for light emitting diodes
Authors:
- D.R. HeathDHD.R. Heath
- C.E.E. StewartCSC.E.E. Stewart
- 1 January 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (1) , 21-26
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Stoichiometric effects in the growth of doped epitaxial layers of GaAs1-χPχJournal of Crystal Growth, 1971
- Electroluminescence of Diffused GaAs1 − xPx Diodes with Low Donor ConcentrationsJournal of Applied Physics, 1969
- Efficiency of GaAs1 − xPx electroluminescent diodesSolid-State Electronics, 1967
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- One-Dimensional Space-Charge Theory. I. GeneralizationJournal of Applied Physics, 1966