Analysis of AlN thin films by combining TOF-ERDA and NRB techniques
Authors:
- J JokinenJJJ Jokinen
- P HaussaloPHP Haussalo
- J KeinonenJKJ Keinonen
- M RitalaM Ritala
- D RiiheläDRD Riihelä
- M LeskeläM Leskelä
- 1 November 1996
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 289 (1-2) , 159-165
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- The surface chemistry of aluminum nitride MOCVD on alumina using trimethylaluminum and ammonia as precursorsSurface Science, 1994
- Optical determination of the film thicknesses in multilayer thin film structuresThin Solid Films, 1993
- Elastic recoil detectionReports on Progress in Physics, 1993
- Atomic layer epitaxyThin Solid Films, 1992
- High energy ERDA with very heavy ions using mass and energy dispersive spectrometryNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Atomic layer epitaxyMaterials Science Reports, 1989
- Time-of-flight system for profiling recoiled light elementsNuclear Instruments and Methods in Physics Research, 1983
- High resolution depth profiling of light elements in high atomic mass materialsNuclear Instruments and Methods in Physics Research, 1983
- A position-sensitive transmission time detectorNuclear Instruments and Methods, 1980
- Growth of high purity AlN crystalsJournal of Crystal Growth, 1976