High-Current Metal Oxide Semiconductor Field-Effect Transistors on H-Terminated Diamond Surfaces and Their High-Frequency Operation
- 1 September 2012
- journal article
- research article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 51 (9R)
Abstract
Metal semiconductor field-effect transistors (MESFETs) or metal oxide semiconductor FETs (MOSFETs) can be fabricated on hydrogen-terminated diamond without losing the surface hydrogen–carbon bonds and the surface adsorbates responsible for the surface carrier generation. Those FETs show their best performance in diamond transistors. The maximum drain current density is above 1 A/mm and the highest transconductance is 400 mS/mm. These values are comparable to those of modern FETs made of Si or III–V semiconductors. Regarding RF performance, the highest cutoff frequency reaches nearly 50 GHz. The power handling capability exceeds those of Si and GaAs at 1 GHz. The function of surface adsorbates and their stabilization are crucial for the application of diamond FETs.Keywords
This publication has 29 references indexed in Scilit:
- Enhancement and Stabilization of Hole Concentration of Hydrogen-Terminated Diamond Surface Using Ozone AdsorbatesJapanese Journal of Applied Physics, 2010
- RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface TerminationIEICE Transactions on Electronics, 2008
- Fabrication of T-Shaped Gate Diamond Metal–Insulator–Semiconductor Field-Effect TransistorsJapanese Journal of Applied Physics, 2006
- 2 W/mm output power density at 1 GHz for diamond FETsElectronics Letters, 2005
- Over 20-GHz Cutoff Frequency Submicrometer-Gate Diamond MISFETsIEEE Electron Device Letters, 2004
- Influence of epitaxy on the surface conduction of diamond filmDiamond and Related Materials, 2004
- Hall Effect Measurements of Surface Conductive Layer on Undoped Diamond Films in NO2 and NH3 AtmospheresJapanese Journal of Applied Physics, 1999
- Hydrogen-terminated diamond surfaces and interfacesSurface Science Reports, 1996
- Fabrication and Characterization of Metal-Semiconductor Field-Effect Transistor Utilizing Diamond Surface-Conductive LayerJapanese Journal of Applied Physics, 1995
- Hydrogenating Effect of Single-Crystal Diamond SurfaceJapanese Journal of Applied Physics, 1992