Decoupling of cold-carrier effects in hot-carrier reliability assessment of HfO/sub 2/ gated nMOSFETs
Authors:
- Rino ChoiRCRino Choi
- Byoung Hun LeeBLByoung Hun Lee
- Seung-Chul SongSSSeung-Chul Song
- Man ChangMCMan Chang
- C.D. YoungCYC.D. Young
- G. BersukerGBG. Bersuker
- J.C. LeeJLJ.C. Lee
- Hyunsang HwangHHHyunsang Hwang
- 24 July 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 27 (8) , 662-664
Abstract
To understand the intrinsic effect of a hot-carrier injection on high-kappa dielectrics free from concurrent cold-carrier trapping, the authors have investigated a hot-carrier-induced damage with channel hot-carrier stresses and substrate hot-carrier stress. Compared to substrate hot-carrier stress, the channel hot-carrier stress shows a more significant cold-carrier-injection effect. By using a detrapping bias, they were able to decouple the effect of cold-carrier trapping from the permanent trap generation induced by the hot-carrier injection. As channel hot-carrier stress bias was reduced, a portion of cold-carrier trapping increased and a portion of interface trap generation decreasedKeywords
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