Realistic Tight-Binding Calculations of Surface States of Si and Ge (111)
Authors:
- 24 June 1974
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 32 (25) , 1433-1436
Abstract
We give semiempirical tight-binding calculations of dangling- and back-bond surface bands and resonances for unreconstructed relaxed Si and Ge (111) surfaces. For Si at high-symmetry points these are in very good agreement with those of Appelbaum and Hamann. Comparison of the results with the energy-loss-spectroscopy data of Rowe and Ibach suggests that the observed back-bond resonances are associated primarily with minima in the back-bond surface bands.Keywords
This publication has 13 references indexed in Scilit:
- Tight-binding calculations of surface states of Si(111)Solid State Communications, 1974
- Metastable phase ofPhysical Review B, 1974
- Surface and Bulk Contributions to Ultraviolet Photoemission Spectra of SiliconPhysical Review Letters, 1974
- Surface Potential, Charge Density, and Ionization Potential for Si(111)-a Self-Consistent CalculationPhysical Review Letters, 1974
- High-Resolution Band Structure and thePeak in GePhysical Review Letters, 1973
- Excitonic instabilities, vacancies, and reconstruction of covalent surfacesSurface Science, 1973
- Surface States and Surface Bonds of Si(111)Physical Review Letters, 1973
- Surface-State Transitions of Silicon in Electron Energy-Loss SpectraPhysical Review Letters, 1973
- Nonlocal Pseudopotential for GePhysical Review Letters, 1973
- First-Principles Calculation of the Bulk Modulus of DiamondPhysical Review B, 1970