GaAs structures with electron mobility of 5×106 cm2/V s
Authors:
- 22 June 1987
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (25) , 1826-1828
Abstract
Modulation‐doped GaAs heterostructures with low‐temperature electron mobilities of 5.0×106 cm2/V s at a two‐dimensional electron areal density of 1.6×1011 cm−2 have been made. The mobilities are the highest ever observed in a semiconductor. Multiple quantum wells of GaAs prepared by similar methods showed electron mobilities up to 0.54×106 cm2/V s at an areal density of 5.3×1011 cm−2 per layer, which also exceeds any mobility value previously reported for multiple well structures. The structures were grown by molecular beam epitaxy with an atomic‐plane sheet‐doping technique.Keywords
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