Facet-Engineered InGaN/GaN Nanorods Grown by Selective-Area MOCVD for Monolithic Multicolor Emission
- 24 February 2026
- journal article
- Published by American Chemical Society (ACS) in Crystal Growth & Design
- Vol. 26 (6) , 2271-2280
Abstract
No abstract availableFunding Information
- Jeonbuk National University
This publication has 40 references indexed in Scilit:
- New Charge Carrier Transport‐Assisting Paths in Ultra‐Long GaN Microwire UV PhotodetectorAdvanced Functional Materials, 2023
- External catalyst-free InGaN photoelectrode for highly efficient energy conversion and H2 generationChemical Engineering Journal, 2023
- A multifunctional robotic system toward moveable sensing and energy harvestingNano Energy, 2021
- Ultracompact display pixels: Tunnel junction nanowire photonic crystal laserNano Energy, 2021
- Scalable Nanowire Photonic Crystals: Molding the Light Emission of InGaNAdvanced Functional Materials, 2017
- Full-Color Single Nanowire Pixels for Projection DisplaysNano Letters, 2016
- Selective-area growth of thin GaN nanowires by MOCVDJournal of Crystal Growth, 2012
- Selective area growth of GaN nanowires using metalorganic chemical vapor deposition on nano-patterned Si(111) formed by the etching of nano-sized Au dropletsThin Solid Films, 2011
- Steady-State and Transient Electron Transport Within the III–V Nitride Semiconductors, GaN, AlN, and InN: A ReviewJournal of Materials Science: Materials in Electronics, 2006
- Quantum-confined Stark effect in strained GaInN quantum wells on sapphire (0 0 0 1)Journal of Crystal Growth, 1998