Structurally Engineered Stackable and Scalable 3D Titanium‐Oxide Switching Devices for High‐Density Nanoscale Memory
Authors:
- 6 November 2014
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 27 (1) , 59-64
Abstract
A 3D high-density switching device is realized utilizing titanium oxide, which is the most optimum material, but which is not practically demonstrated yet. The 1S1R (one ReRAM with the developed switching device) exhibits memory characteristics with a significantly suppressed sneak current, which can be used to realize high-density ReRAM applications.Keywords
This publication has 20 references indexed in Scilit:
- Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance MemristorAdvanced Materials, 2011
- Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von‐Neumann ComputersAdvanced Materials, 2011
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structuresNature Materials, 2011
- Low‐Power High‐Performance Non‐Volatile Memory on a Flexible Substrate with Excellent EnduranceAdvanced Materials, 2010
- High switching endurance in TaOx memristive devicesApplied Physics Letters, 2010
- Electric‐Field‐Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM MemoriesAdvanced Materials, 2010
- Resistive switching in transition metal oxidesMaterials Today, 2008
- Write Current Reduction in Transition Metal Oxide Based Resistance Change MemoryAdvanced Materials, 2008
- Nanoionics-based resistive switching memoriesNature Materials, 2007
- High‐Throughput Characterization of Metal Electrode Performance for Electric‐Field‐Induced Resistance Switching in Metal/Pr0.7Ca0.3MnO3/Metal StructuresAdvanced Materials, 2007