Wavelength dependence of noise figure in InGaAs/InGaAsP multiple-quantum-well laser amplifier
Authors:
- K.E. StubkjaerKSK.E. Stubkjaer
- 1 June 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (6) , 550-553
Abstract
Theoretical and experimental results are presented for the wavelength dependence of the noise figure and the single-pass gain in multiquantum well amplifiers. The theoretical model accounts for both conduction band/heavy hole band and conduction band/light-hole band transitions. The calculations are in good agreement with the experimental results, which indicate that the noise figure has some dependence on the wavelength. A minimum traveling-wave amplifier (TWA) noise figure of 3.9 dB has been measured at 1550 nm for a single-pass of 22 dB.Keywords
This publication has 13 references indexed in Scilit:
- Noise in semiconductor laser amplifiers with quantum box structureIEEE Photonics Technology Letters, 1991
- Corrections to the expression for gain in GaAsIEEE Journal of Quantum Electronics, 1990
- Temperature-dependent gain and noise of 1.5 μm laser amplifiersElectronics Letters, 1989
- Theoretical gain of strained-layer semiconductor lasers in the large strain regimeIEEE Journal of Quantum Electronics, 1989
- Wavelength dependence of noise figure of a travelling-wave GaInAsP/InP laser amplifierElectronics Letters, 1988
- 1.5 µm GaInAsP traveling-wave semiconductor laser amplifierIEEE Journal of Quantum Electronics, 1987
- Band-gap renormalization in semiconductor quantum wells containing carriersPhysical Review B, 1985
- Anistropy and broadening of optical gain in a GaAs/AlGaAs multiquantum-well laserIEEE Journal of Quantum Electronics, 1985
- Gain and intervalence band absorption in quantum-well lasersIEEE Journal of Quantum Electronics, 1984
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957