Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition
Authors:
- 25 August 2014
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 105 (8) , 082114
Abstract
The influence of vicinal sapphire substrates on the growth of N-polar GaN films by metal-organic chemical vapor deposition is investigated. Smooth GaN films without hexagonal surface feature are obtained on vicinal substrate. Transmission electron microscope results reveal that basal-plane stacking faults are formed in GaN on vicinal substrate, leading to a reduction in threading dislocation density. Furthermore, it has been found that there is a weaker yellow luminescence in GaN on vicinal substrate than that on (0001) substrate, which might be explained by the different trends of the carbon impurity incorporation.Keywords
Funding Information
- the Fundamental Research Funds for the Central Universities (JB141101, K50511250002)
- National Natural Science Foundation of China (61204006, 61334002)
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