Evolution of high efficiency passivated emitter and rear contact (PERC) solar cells
Authors:
- Sourav SadhukhanSSSourav Sadhukhan
- Shiladitya AcharyaSAShiladitya Acharya
- Tamalika PandaTPTamalika Panda
- Nabin Chandra MandalNMNabin Chandra Mandal
- Sukanta BoseSBSukanta Bose
- Anupam NandiANAnupam Nandi
- Gourab DasGDGourab Das
- Santanu MaitySMSantanu Maity
- Susanta ChakrabortySCSusanta Chakraborty
- Partha ChaudhuriPCPartha Chaudhuri
- Hiranmay SahaHSHiranmay Saha
- 15 April 2022
- book chapter
- Published by Elsevier
- p. 63-129
Abstract
No abstract availableThis publication has 81 references indexed in Scilit:
- Laser Ablation of Dielectric Layers and Formation of Local Al-BSF in Dielectric back Passivated Solar CellsEnergy Procedia, 2013
- Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacksJournal of Applied Physics, 2011
- Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer depositionJournal of Applied Physics, 2011
- Investigation of ablation mechanisms for selective laser ablation of silicon nitride layersEnergy Procedia, 2011
- Analysis of local Al-doped back surface fields for high efficiency screen-printed solar cellsEnergy Procedia, 2011
- Laser ablation of SiO2for locally contacted Si solar cells with ultra‐short pulsesProgress in Photovoltaics: Research and Applications, 2007
- Very low bulk and surface recombination in oxidized silicon wafersSemiconductor Science and Technology, 2001
- Chemistry of Si-SiO2 interface trap annealingJournal of Applied Physics, 1988
- Minority carrier recombination in heavily-doped siliconSolid-State Electronics, 1983
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952