High-Performance Ge Metal–Oxide–Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO₂/GeO₂Bilayer Passivation

This publication has 9 references indexed in Scilit:

• Fabrication of Ge Metal–Oxide–Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO₂/GeO₂ Bilayer Passivation and Postmetallization Annealing Effect of Al
  Japanese Journal of Applied Physics, 2011
• Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO₂Interfacial Layers
  Japanese Journal of Applied Physics, 2011
• High-Performance $\hbox{GeO}_{2}/\hbox{Ge}$ nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping
  IEEE Electron Device Letters, 2010
• High Electron Mobility Ge n-Channel Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated by the Gate-Last Process with the Solid Source Diffusion Technique
  Applied Physics Express, 2010
• Ge/GeO₂Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
  Applied Physics Express, 2009
• Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
  Applied Physics Letters, 2008
• On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates
  IEEE Transactions on Electron Devices, 2008
• Ion-implantation and diffusion behaviour of boron in germanium
  Physica B: Condensed Matter, 2001
• Effect of preoxidation on deposition of thin gate-quality silicon oxide film at low temperature by using a sputter-type electron cyclotron resonance plasma
  Journal of Applied Physics, 1997