High Temperature CsPbBrxI3–x Memristors Based on Hybrid Electrical and Optical Resistive Switching Effects

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Abstract
The emergence of perovskite-based memristors associated with the migration of ions has attracted attention for use in overcoming the limitations of the von Neumann computing architecture and removing the bottleneck of storage density. However, systematic research on the temperature dependence of halide perovskite-based memristors is still required due to the unavoidable thermal stability limits. In this work, mixed halide CsPbBrxI3–x-based (X = 0, 1, 2) memristors with unique electrical and optical resistive switching properties in an ambient atmosphere from room temperature to a 240 °C maximum have been successfully achieved. At room temperature, the CsPbBrxI3–x-based memristors exhibit outstanding resistive switching behaviors such as ultralow operating voltage (∼0.81, ∼0.64, and ∼0.54 V for different devices, respectively), moderate ON/OFF ratio (∼102), stable endurance (103 cycles), and long retention time (104 s). The CsPbBrxI3–x-based memristors maintain excellent repeatability and stability at high temperature. Endurance failures of CsPbI3, CsPbBrI2, and CsPbBr2I memristors occur at 90, 150, and 270 °C, respectively. Finally, nonvolatile imaging employing CsPbBr2I-based memristor arrays based on the electrical-write and optical-erase operation at 100 °C has been demonstrated. This study provides utilization potentiality in the high temperature scenarios for perovskite wearable and large-scale information devices.
Funding Information
  • Ministry of Science and Technology of the People's Republic of China (2016YFB0401802)
  • Shandong University
  • National Natural Science Foundation of China (51702186)

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