Direct measurement of the hot carrier cooling rate ina-Si:H using femtosecond 4 eV pulses
Authors:
- 21 December 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 69 (25) , 3682-3685
Abstract
We report the first direct measurement of the hot carrier cooling rate in a-Si:H. The femtosecond pump and probe technique with both 2 and 4 eV pulses was used to generate and probe directly hot carriers with considerable excess energy in the extended states of this material. The unexpectedly large average energy dissipation rate of 2 eV/psec obtained from our experiments suggests that disorder-enhanced carrier-phonon interactions may play an important role in the cooling process.Keywords
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