Superconductive tunneling into NbN deposited near room temperature

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Abstract
We have developed the ability to deposit niobium nitride thin films routinely having a superconducting transition temperature of 14 K by dc reactive magnetron sputtering onto substrates held near room temperature (Ts V‐I characteristics, suitable for device applications and offering potential advantages over conventional Pb‐alloy/Pb‐alloy and Nb/Pb‐alloy junctions. These high quality junctions are also suitable for tunneling investigations of superconductivity in the Nb‐N system.

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