1.55 μm high-gain polarisation-insensitive semiconductor travelling wave amplifier with low driving current

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Abstract
Polarisation-insensitive GaInAsP/InP semiconductor amplifiers have been fabricated from gas source molecular beam epitaxy (GSMBE) and BH laser with multilayer coatings. The TE and TM gains are equal to within 1dB and an average internal gain of 28 dB is obtained at only 50 mA forward current.