Capacitance–voltage characteristics of selectively doped AlxGa1−xAs/GaAs heterostructures containing deep traps
- 1 July 1999
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 86 (1) , 532-536
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Capacitance-voltage dependence for isotype AlGaAs/GaAs heterointerfaces comprisong rechargeable trapsSolid-State Electronics, 1990
- The determination of heterojunction energy band discontinuities in the presence of interface states using capacitance-voltage techniquesJournal of Applied Physics, 1988
- C-V measurement and modelization of GaInAs/InP heterointerface with trapsJournal of Applied Physics, 1987
- Theory of theDXcenter inAs and GaAs crystalsPhysical Review B, 1986
- Gate capacitance—Voltage characteristic of MODFET's: Its effect on transconductanceIEEE Transactions on Electron Devices, 1985
- Quasi-Fermi level bending in MODFET's and its effect on FET transfer characteristicsIEEE Transactions on Electron Devices, 1985
- Electron energy levels in GaAs-heterojunctionsPhysical Review B, 1984
- Observation of deep levels associated with the GaAs/AlxGa1−xAs interface grown by molecular beam epitaxyApplied Physics Letters, 1982
- An n-In0.53Ga0.47As/n-InP rectifierJournal of Applied Physics, 1981
- Measurement of isotype heterojunction barriers by C-V profilingApplied Physics Letters, 1980