Boride-enhanced diffusion in silicon: Bulk and surface layers
Authors:
- 12 July 1999
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (2) , 181-183
Abstract
Epitaxial silicon boride layers, located at the surface or within the bulk of single-crystal silicon, give rise to enhanced diffusion of B during annealing. A submonolayer buried boride layer releases ≈0.4 interstitials per B atom in the layer, generating a transient diffusion enhancement in the range of 10–100 for several minutes at 900 °C. The resulting profile broadening is comparable to that caused by ion implantation damage. At the same temperature, surface boride layers generate a diffusion enhancement of ∼6, part of which arises from the B diffusion flux and part from the chemical influence of the boride layer.Keywords
This publication has 12 references indexed in Scilit:
- Ultra-shallow junction formation by spike annealing in a lamp-based or hot-walled rapid thermal annealing system: effect of ramp-up rateMaterials Science in Semiconductor Processing, 1998
- The fraction of substitutional boron in silicon during ion implantation and thermal annealingApplied Physics Letters, 1998
- Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of siliconMaterials Science in Semiconductor Processing, 1998
- B diffusion and clustering in ion implanted Si: The role of B cluster precursorsApplied Physics Letters, 1997
- Role of C and B clusters in transient diffusion of B in siliconApplied Physics Letters, 1996
- Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditionsPhysical Review B, 1995
- The role of the surface in transient enhanced diffusionApplied Physics Letters, 1995
- New technique for measuring two-dimensional oxidation-enhanced diffusion in silicon at low temperaturesApplied Physics Letters, 1994
- Characteristics of Shallow Boron‐Doped Layers in Si by Rapid Vapor‐Phase Direct DopingJournal of the Electrochemical Society, 1993
- Boron diffusion in silicon at high concentrationsJournal of Applied Physics, 1988