A novel cell technology using N-doped GeSbTe films for phase change RAM
Authors:
- H. HoriiHHH. Horii
- J.H. YiJYJ.H. Yi
- J.H. ParkJPJ.H. Park
- Y.H. HaYHY.H. Ha
- I.G. BaekIBI.G. Baek
- S.O. ParkSPS.O. Park
- Y.N. HwangYHY.N. Hwang
- S.H. LeeSLS.H. Lee
- Y.T. KimYKY.T. Kim
- K.H. LeeKLK.H. Lee
- U-In ChungUCU-In Chung
- J.T. MoonJMJ.T. Moon
- 2 March 2004
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- Investigation of Crystallization Behavior of Sputter-Deposited Nitrogen-Doped Amorphous Ge2Sb2Te5 Thin FilmsJapanese Journal of Applied Physics, 2000