Impact of post-ion implantation annealing on Se-hyperdoped Ge

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Abstract
Hyperdoped germanium (Ge) has demonstrated increased sub-bandgap absorption, offering potential applications in the short-wavelength-infrared spectrum (1.0–3.0 μm). This study employs ion implantation to introduce a high concentration of selenium (Se) into Ge and investigates the effects of post-implantation annealing techniques on the recovery of implantation damage and alterations in optical properties. We identify optimal conditions for two distinct annealing techniques: rapid thermal annealing (RTA) at a temperature of 650 °C and ultrafast laser heating (ULH) at a fluence of 6 mJ/cm2. The optimized ULH process outperforms the RTA method in preserving high doping profiles and achieving a fourfold increase in sub-bandgap absorption. However, RTA leads to regrowth of single crystalline Ge, while ULH most likely leads to polycrystalline Ge. The study offers valuable insights into the hyperdoping processes in Ge for the development of advanced optoelectronic devices.
Funding Information
  • Research Council of Finland (354199)
  • Research Council of Finland (331313)
  • Research Council of Finland (346529)
  • Business Finland (7479/31/2019)
  • Bundesministerium für Forschung, Technologie und Raumfahrt (FKZ03INT701AA)
  • Horizon 2020 Framework Programme (824096)

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